VS-GT400TH120N - IGBT 1200V 600A 2119W DIAP

Nombor Bahagian pengilang

VS-GT400TH120N

Nombor Bahagian dalaman

ABC-VS-GT400TH120N

pengeluar

Vishay Semiconductor Diodes Division

Penerangan ringkas

IGBT 1200V 600A 2119W DIAP

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

39678 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai VS-GT400TH120N dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi VS-GT400TH120N

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : VS-GT400TH120N

pengeluar : Vishay Semiconductor Diodes Division

Penerangan : IGBT 1200V 600A 2119W DIAP

Siri : -

Status Bahagian : Obsolete

Jenis IGBT : Trench

Konfigurasi : Half Bridge

Voltage - Breaker Pemungut Pemungut (Max) : 1200V

Pemungut Semasa (Ic) (Maks) : 600A

Kuasa - Maks : 2119W

Vce (pada) (Maks) @ Vge, Ic : 2.15V @ 15V, 400A

Semasa - Pemungut Cutoff (Max) : 5mA

Input Capacitance (Cies) @ Vce : 28.8nF @ 25V

Input : Standard

NTC Thermistor : No

Suhu Operasi : 150°C (TJ)

Jenis Pemasangan : Chassis Mount

Pakej / Kes : Double INT-A-PAK (3 + 8)

Pakej Peranti Pembekal : Double INT-A-PAK

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : VS-G , VS-GT40

dokumen untuk VS-GT400TH120N

Helaian data : VS-GT400TH120N.pdf

produk berkaitan untuk VS-GT400TH120N Vishay Semiconductor Diodes Division

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