SI8823EDB-T2-E1 - MOSFET P-CH 20V 2.7A 4-MICROFOOT

Nombor Bahagian pengilang

SI8823EDB-T2-E1

Nombor Bahagian dalaman

ABC-SI8823EDB-T2-E1

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET P-CH 20V 2.7A 4-MICROFOOT

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

5375230 Pieces

Harga rujukan

~~USD 0.060895~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI8823EDB-T2-E1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI8823EDB-T2-E1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI8823EDB-T2-E1

pengeluar : Vishay Siliconix

Penerangan : MOSFET P-CH 20V 2.7A 4-MICROFOOT

Siri : TrenchFET® Gen III

Status Bahagian : Active

Jenis FET : P-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 2.7A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 95 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 800mV @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 10nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 580pF @ 10V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 900mW (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 4-MICRO FOOT® (0.8x0.8)

Pakej / Kes : 4-XFBGA

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI882 , SI8823E

dokumen untuk SI8823EDB-T2-E1

Helaian data : SI8823EDB-T2-E1.pdf

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