TH58BYG2S3HBAI6 - IC FLASH 4G PARALLEL 67VFBGA

Nombor Bahagian pengilang

TH58BYG2S3HBAI6

Nombor Bahagian dalaman

ABC-TH58BYG2S3HBAI6

pengeluar

Toshiba Memory America, Inc.

Penerangan ringkas

IC FLASH 4G PARALLEL 67VFBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

135032 Pieces

Harga rujukan

~~USD 3.08~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai TH58BYG2S3HBAI6 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi TH58BYG2S3HBAI6

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : TH58BYG2S3HBAI6

pengeluar : Toshiba Memory America, Inc.

Penerangan : IC FLASH 4G PARALLEL 67VFBGA

Siri : Benand™

Status Bahagian : Active

Jenis Memori : Non-Volatile

Format Memori : FLASH

Teknologi : FLASH - NAND (SLC)

Saiz Memori : 4Gb (512M x 8)

Frekuensi Jam : -

Tulis Masa Kitar - Kata, Halaman : 25ns

Masa Capaian : 25ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.7V ~ 1.95V

Suhu Operasi : -40°C ~ 85°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 67-VFBGA

Pakej Peranti Pembekal : 67-VFBGA (6.5x8)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : TH58B , TH58BYG

dokumen untuk TH58BYG2S3HBAI6

Helaian data : TH58BYG2S3HBAI6.pdf

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