RQ3E100GNTB - MOSFET N-CH 30V 10A 8-HSMT

Nombor Bahagian pengilang

RQ3E100GNTB

Nombor Bahagian dalaman

ABC-RQ3E100GNTB

pengeluar

Rohm Semiconductor

Penerangan ringkas

MOSFET N-CH 30V 10A 8-HSMT

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

4723299 Pieces

Harga rujukan

~~USD 0.0693~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai RQ3E100GNTB dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spesifikasi bagi RQ3E100GNTB

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : RQ3E100GNTB

pengeluar : Rohm Semiconductor

Penerangan : MOSFET N-CH 30V 10A 8-HSMT

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 10A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 11.7 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 7.9nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 15V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2W (Ta), 15W (Tc)

Suhu Operasi : 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-HSMT (3.2x3)

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : RQ3 , RQ3E1

dokumen untuk RQ3E100GNTB

Helaian data : RQ3E100GNTB.pdf

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