SIHH21N65E-T1-GE3 - MOSFET N-CH 650V 20.3A PWRPAK8X8

Nombor Bahagian pengilang

SIHH21N65E-T1-GE3

Nombor Bahagian dalaman

ABC-SIHH21N65E-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH 650V 20.3A PWRPAK8X8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

215312 Pieces

Harga rujukan

~~USD 1.737315~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SIHH21N65E-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SIHH21N65E-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SIHH21N65E-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH 650V 20.3A PWRPAK8X8

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 650V

Semasa - Saliran berterusan (Id) @ 25 ° C : 20.3A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 170 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 99nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 2404pF @ 100V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 156W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PowerPAK® 8 x 8

Pakej / Kes : 8-PowerTDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SIHH2 , SIHH21N6

dokumen untuk SIHH21N65E-T1-GE3

Helaian data : SIHH21N65E-T1-GE3.pdf

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