SIHB35N60E-GE3 - MOSFET N-CH 600V 32A D2PAK TO263

Nombor Bahagian pengilang

SIHB35N60E-GE3

Nombor Bahagian dalaman

ABC-SIHB35N60E-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH 600V 32A D2PAK TO263

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

105664 Pieces

Harga rujukan

~~USD 3.54~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SIHB35N60E-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SIHB35N60E-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SIHB35N60E-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH 600V 32A D2PAK TO263

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 650V

Semasa - Saliran berterusan (Id) @ 25 ° C : 32A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 94 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 132nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 2760pF @ 100V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 250W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : D²PAK (TO-263)

Pakej / Kes : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SIHB , SIHB35N

dokumen untuk SIHB35N60E-GE3

Helaian data : SIHB35N60E-GE3.pdf

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