AS4C512M8D3B-12BIN - IC DRAM 4G PARALLEL 78FBGA

Nombor Bahagian pengilang

AS4C512M8D3B-12BIN

Nombor Bahagian dalaman

ABC-AS4C512M8D3B-12BIN

pengeluar

Alliance Memory, Inc.

Penerangan ringkas

IC DRAM 4G PARALLEL 78FBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

68384 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai AS4C512M8D3B-12BIN dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi AS4C512M8D3B-12BIN

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : AS4C512M8D3B-12BIN

pengeluar : Alliance Memory, Inc.

Penerangan : IC DRAM 4G PARALLEL 78FBGA

Siri : -

Status Bahagian : Preliminary

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - DDR3

Saiz Memori : 4Gb (512M x 8)

Frekuensi Jam : 800MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 20ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.425V ~ 1.575V

Suhu Operasi : -40°C ~ 95°C (TC)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 78-VFBGA

Pakej Peranti Pembekal : 78-FBGA (9x10.5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : AS4C51 , AS4C512M8

dokumen untuk AS4C512M8D3B-12BIN

Helaian data : AS4C512M8D3B-12BIN.pdf

produk berkaitan untuk AS4C512M8D3B-12BIN Alliance Memory, Inc.

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