MT29E512G08CEHBBJ4-3ES:B TR - IC FLASH 512G PARALLEL 333MHZ

Nombor Bahagian pengilang

MT29E512G08CEHBBJ4-3ES:B TR

Nombor Bahagian dalaman

ABC-MT29E512G08CEHBBJ4-3ES:B TR

pengeluar

Micron Technology Inc.

Penerangan ringkas

IC FLASH 512G PARALLEL 333MHZ

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

55782 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai MT29E512G08CEHBBJ4-3ES:B TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi MT29E512G08CEHBBJ4-3ES:B TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : MT29E512G08CEHBBJ4-3ES:B TR

pengeluar : Micron Technology Inc.

Penerangan : IC FLASH 512G PARALLEL 333MHZ

Siri : -

Status Bahagian : Active

Jenis Memori : Non-Volatile

Format Memori : FLASH

Teknologi : FLASH - NAND

Saiz Memori : 512Gb (64G x 8)

Frekuensi Jam : 333MHz

Tulis Masa Kitar - Kata, Halaman : -

Masa Capaian : -

Antara Muka Memori : Parallel

Voltan - Bekalan : 2.5V ~ 3.6V

Suhu Operasi : 0°C ~ 70°C (TA)

Jenis Pemasangan : -

Pakej / Kes : -

Pakej Peranti Pembekal : -

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : MT29E512G , MT29E512G08CE

dokumen untuk MT29E512G08CEHBBJ4-3ES:B TR

Helaian data : MT29E512G08CEHBBJ4-3ES:B TR.pdf

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