NDD60N550U1-1G - MOSFET N-CH 600V 8.2A IPAK-4

Nombor Bahagian pengilang

NDD60N550U1-1G

Nombor Bahagian dalaman

ABC-NDD60N550U1-1G

pengeluar

ON Semiconductor

Penerangan ringkas

MOSFET N-CH 600V 8.2A IPAK-4

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

86496 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai NDD60N550U1-1G dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi NDD60N550U1-1G

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : NDD60N550U1-1G

pengeluar : ON Semiconductor

Penerangan : MOSFET N-CH 600V 8.2A IPAK-4

Siri : -

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 600V

Semasa - Saliran berterusan (Id) @ 25 ° C : 8.2A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 550 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 18nC @ 10V

Vgs (Max) : ±25V

Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 50V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 94W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : IPAK (TO-251)

Pakej / Kes : TO-251-3 Short Leads, IPak, TO-251AA

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : NDD6 , NDD60N5

dokumen untuk NDD60N550U1-1G

Helaian data : NDD60N550U1-1G.pdf

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