FQD2N60CTF_F080 - MOSFET N-CH 600V 1.9A DPAK

Nombor Bahagian pengilang

FQD2N60CTF_F080

Nombor Bahagian dalaman

ABC-FQD2N60CTF_F080

pengeluar

ON Semiconductor

Penerangan ringkas

MOSFET N-CH 600V 1.9A DPAK

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

46614 Pieces

Harga rujukan

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ABC Semiconductor mempunyai FQD2N60CTF_F080 dalam stok untuk menjual.

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spesifikasi bagi FQD2N60CTF_F080

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : FQD2N60CTF_F080

pengeluar : ON Semiconductor

Penerangan : MOSFET N-CH 600V 1.9A DPAK

Siri : QFET®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 600V

Semasa - Saliran berterusan (Id) @ 25 ° C : 1.9A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.7 Ohm @ 950mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 235pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2.5W (Ta), 44W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : D-Pak

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : FQD2N , FQD2N60

dokumen untuk FQD2N60CTF_F080

Helaian data : FQD2N60CTF_F080.pdf

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