TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

Nombor Bahagian pengilang

TK4A60DB(STA4,Q,M)

Nombor Bahagian dalaman

ABC-TK4A60DB(STA4,Q,M)

pengeluar

Toshiba Semiconductor and Storage

Penerangan ringkas

MOSFET N-CH 600V 3.7A TO-220SIS

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

51072 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai TK4A60DB(STA4,Q,M) dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi TK4A60DB(STA4,Q,M)

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : TK4A60DB(STA4,Q,M)

pengeluar : Toshiba Semiconductor and Storage

Penerangan : MOSFET N-CH 600V 3.7A TO-220SIS

Siri : π-MOSVII

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 600V

Semasa - Saliran berterusan (Id) @ 25 ° C : 3.7A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 35W (Tc)

Suhu Operasi : 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : TO-220SIS

Pakej / Kes : TO-220-3 Full Pack

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : TK4A60 , TK4A60DB(

dokumen untuk TK4A60DB(STA4,Q,M)

Helaian data : TK4A60DB(STA4,Q,M).pdf

produk berkaitan untuk TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage

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