IPI041N12N3GAKSA1 - MOSFET N-CH 120V 120A TO262-3

Nombor Bahagian pengilang

IPI041N12N3GAKSA1

Nombor Bahagian dalaman

ABC-IPI041N12N3GAKSA1

pengeluar

Infineon Technologies

Penerangan ringkas

MOSFET N-CH 120V 120A TO262-3

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

217904 Pieces

Harga rujukan

~~USD 1.71671~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai IPI041N12N3GAKSA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IPI041N12N3GAKSA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IPI041N12N3GAKSA1

pengeluar : Infineon Technologies

Penerangan : MOSFET N-CH 120V 120A TO262-3

Siri : OptiMOS™

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 120V

Semasa - Saliran berterusan (Id) @ 25 ° C : 120A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.1 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 270µA

Caj Gate (Qg) (Max) @ Vgs : 211nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 13800pF @ 60V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 300W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : PG-TO262-3

Pakej / Kes : TO-262-3 Long Leads, I²Pak, TO-262AA

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IPI04 , IPI041N1

dokumen untuk IPI041N12N3GAKSA1

Helaian data : IPI041N12N3GAKSA1.pdf

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