EDB1316BDBH-1DAAT-F-R TR - IC DRAM 1G PARALLEL 134VFBGA

Nombor Bahagian pengilang

EDB1316BDBH-1DAAT-F-R TR

Nombor Bahagian dalaman

ABC-EDB1316BDBH-1DAAT-F-R TR

pengeluar

Micron Technology Inc.

Penerangan ringkas

IC DRAM 1G PARALLEL 134VFBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

112064 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai EDB1316BDBH-1DAAT-F-R TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi EDB1316BDBH-1DAAT-F-R TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : EDB1316BDBH-1DAAT-F-R TR

pengeluar : Micron Technology Inc.

Penerangan : IC DRAM 1G PARALLEL 134VFBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - Mobile LPDDR2

Saiz Memori : 1Gb (64M x 16)

Frekuensi Jam : 533MHz

Tulis Masa Kitar - Kata, Halaman : -

Masa Capaian : -

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.14V ~ 1.95V

Suhu Operasi : -40°C ~ 105°C (TC)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 134-VFBGA

Pakej Peranti Pembekal : 134-VFBGA (10x11.5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : EDB1316B , EDB1316BDBH-

dokumen untuk EDB1316BDBH-1DAAT-F-R TR

Helaian data : EDB1316BDBH-1DAAT-F-R TR.pdf

produk berkaitan untuk EDB1316BDBH-1DAAT-F-R TR Micron Technology Inc.

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