A2G35S200-01SR3 - AIRFAST RF POWER GAN TRANSISTOR

Nombor Bahagian pengilang

Nombor Bahagian dalaman

pengeluar

Penerangan ringkas

AIRFAST RF POWER GAN TRANSISTOR

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

38556 Pieces

Harga rujukan

~~USD 61.71792~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai A2G35S200-01SR3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : A2G35S200-01SR3

pengeluar : NXP USA Inc.

Penerangan : AIRFAST RF POWER GAN TRANSISTOR

Siri : -

Status Bahagian : Active

Jenis Transistor : LDMOS

Kekerapan : 3.4GHz ~ 3.6GHz

Keuntungan : 16.1dB

Voltan - Ujian : 48V

Penilaian Semasa : -

Rajah Bunyi : -

Semasa - Ujian : 291mA

Kuasa - Output : 180W

Voltan - Nilai : 125V

Pakej / Kes : NI-400S-2S

Pakej Peranti Pembekal : NI-400S-2S

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : A2G35 , A2G35S2

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