RS1E350BNTB - MOSFET N-CH 30V 35A 8HSOP

Nombor Bahagian pengilang

RS1E350BNTB

Nombor Bahagian dalaman

ABC-RS1E350BNTB

pengeluar

Rohm Semiconductor

Penerangan ringkas

MOSFET N-CH 30V 35A 8HSOP

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

960372 Pieces

Harga rujukan

~~USD 0.34083~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai RS1E350BNTB dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi RS1E350BNTB

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : RS1E350BNTB

pengeluar : Rohm Semiconductor

Penerangan : MOSFET N-CH 30V 35A 8HSOP

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 35A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 185nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 7900pF @ 15V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 35W (Tc)

Suhu Operasi : 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-HSOP

Pakej / Kes : 8-PowerTDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : RS1 , RS1E3

dokumen untuk RS1E350BNTB

Helaian data : RS1E350BNTB.pdf

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