IXTF6N200P3 - MOSFET N-CH

Nombor Bahagian pengilang

IXTF6N200P3

Nombor Bahagian dalaman

ABC-IXTF6N200P3

pengeluar

IXYS

Penerangan ringkas

MOSFET N-CH

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

56303 Pieces

Harga rujukan

~~USD 10.795~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai IXTF6N200P3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IXTF6N200P3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IXTF6N200P3

pengeluar : IXYS

Penerangan : MOSFET N-CH

Siri : Polar™

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 2000V

Semasa - Saliran berterusan (Id) @ 25 ° C : 4A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.2 Ohm @ 3A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 143nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3700pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 215W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : ISOPLUS i4-PAC™

Pakej / Kes : ISOPLUSi5-Pak™

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IXT , IXTF6

dokumen untuk IXTF6N200P3

Helaian data : IXTF6N200P3.pdf

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