CDBJSC5650-G - DIODE SILICON CARBIDE POWER SCHO

Nombor Bahagian pengilang

CDBJSC5650-G

Nombor Bahagian dalaman

ABC-CDBJSC5650-G

pengeluar

Comchip Technology

Penerangan ringkas

DIODE SILICON CARBIDE POWER SCHO

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

265034 Pieces

Harga rujukan

~~USD 1.235~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai CDBJSC5650-G dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi CDBJSC5650-G

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : CDBJSC5650-G

pengeluar : Comchip Technology

Penerangan : DIODE SILICON CARBIDE POWER SCHO

Siri : -

Status Bahagian : Active

Jenis Diod : Silicon Carbide Schottky

Voltan - DC Reverse (Vr) (Max) : 650V

Semasa - Purata Rectified (Io) : 5A (DC)

Voltan - Teruskan (Vf) (Max) @ Jika : 1.7V @ 5A

Kelajuan : No Recovery Time > 500mA (Io)

Masa Pemulihan Songsang (trr) : 0ns

Semasa - Kebocoran Songsang @ Vr : 100µA @ 650V

Kapasiti @ Vr, F : 430pF @ 0V, 1MHz

Jenis Pemasangan : Through Hole

Pakej / Kes : TO-220-2 Full Pack

Pakej Peranti Pembekal : TO-220F

Suhu Pengoperasian - Persimpangan : -55°C ~ 175°C

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : CDBJ , CDBJSC

dokumen untuk CDBJSC5650-G

Helaian data : CDBJSC5650-G.pdf

produk berkaitan untuk CDBJSC5650-G Comchip Technology

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