FQD2N100TF - MOSFET N-CH 1000V 1.6A DPAK

Nombor Bahagian pengilang

FQD2N100TF

Nombor Bahagian dalaman

ABC-FQD2N100TF

pengeluar

ON Semiconductor

Penerangan ringkas

MOSFET N-CH 1000V 1.6A DPAK

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

112496 Pieces

Harga rujukan

~~USD 0~~

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ABC Semiconductor mempunyai FQD2N100TF dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spesifikasi bagi FQD2N100TF

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : FQD2N100TF

pengeluar : ON Semiconductor

Penerangan : MOSFET N-CH 1000V 1.6A DPAK

Siri : QFET®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 1000V

Semasa - Saliran berterusan (Id) @ 25 ° C : 1.6A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 9 Ohm @ 800mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 15.5nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2.5W (Ta), 50W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : D-Pak

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : FQD , FQD2N

dokumen untuk FQD2N100TF

Helaian data : FQD2N100TF.pdf

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