SI7911DN-T1-GE3 - MOSFET 2P-CH 20V 4.2A 1212-8

Nombor Bahagian pengilang

SI7911DN-T1-GE3

Nombor Bahagian dalaman

ABC-SI7911DN-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2P-CH 20V 4.2A 1212-8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

60502 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI7911DN-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI7911DN-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI7911DN-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2P-CH 20V 4.2A 1212-8

Siri : TrenchFET®

Status Bahagian : Obsolete

Jenis FET : 2 P-Channel (Dual)

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 4.2A

Rds On (Max) @ Id, Vgs : 51 mOhm @ 5.7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Kuasa - Maks : 1.3W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : PowerPAK® 1212-8 Dual

Pakej Peranti Pembekal : PowerPAK® 1212-8 Dual

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI791 , SI7911D

dokumen untuk SI7911DN-T1-GE3

Helaian data : SI7911DN-T1-GE3.pdf

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