R6002END3TL1 - NCH 600V 2A POWER MOSFET

Nombor Bahagian pengilang

R6002END3TL1

Nombor Bahagian dalaman

ABC-R6002END3TL1

pengeluar

Rohm Semiconductor

Penerangan ringkas

NCH 600V 2A POWER MOSFET

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1694217 Pieces

Harga rujukan

~~USD 0.1932~~

Harga kami

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ABC Semiconductor mempunyai R6002END3TL1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spesifikasi bagi R6002END3TL1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : R6002END3TL1

pengeluar : Rohm Semiconductor

Penerangan : NCH 600V 2A POWER MOSFET

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 600V

Semasa - Saliran berterusan (Id) @ 25 ° C : 1.7A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 6.5nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 65pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 26W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : TO-252

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : R600 , R6002E

dokumen untuk R6002END3TL1

Helaian data : R6002END3TL1.pdf

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