IGT60R070D1ATMA1 - IC GAN FET 600V 60A 8HSOF

Nombor Bahagian pengilang

IGT60R070D1ATMA1

Nombor Bahagian dalaman

ABC-IGT60R070D1ATMA1

pengeluar

Infineon Technologies

Penerangan ringkas

IC GAN FET 600V 60A 8HSOF

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

75036 Pieces

Harga rujukan

~~USD 8.09949~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai IGT60R070D1ATMA1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IGT60R070D1ATMA1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IGT60R070D1ATMA1

pengeluar : Infineon Technologies

Penerangan : IC GAN FET 600V 60A 8HSOF

Siri : CoolGaN™

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Salurkan ke Voltan Sumber (Vdss) : 600V

Semasa - Saliran berterusan (Id) @ 25 ° C : 31A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 2.6mA

Caj Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -10V

Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 400V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 125W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PG-HSOF-8-3

Pakej / Kes : 8-PowerSFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IGT60 , IGT60R07

dokumen untuk IGT60R070D1ATMA1

Helaian data : IGT60R070D1ATMA1.pdf

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