MT41K512M8RH-125 V:E TR - IC DRAM 4G PARALLEL 78FBGA

Nombor Bahagian pengilang

MT41K512M8RH-125 V:E TR

Nombor Bahagian dalaman

ABC-MT41K512M8RH-125 V:E TR

pengeluar

Micron Technology Inc.

Penerangan ringkas

IC DRAM 4G PARALLEL 78FBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

112600 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai MT41K512M8RH-125 V:E TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi MT41K512M8RH-125 V:E TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : MT41K512M8RH-125 V:E TR

pengeluar : Micron Technology Inc.

Penerangan : IC DRAM 4G PARALLEL 78FBGA

Siri : -

Status Bahagian : Obsolete

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - DDR3L

Saiz Memori : 4Gb (512M x 8)

Frekuensi Jam : 800MHz

Tulis Masa Kitar - Kata, Halaman : -

Masa Capaian : 13.75ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.283V ~ 1.45V

Suhu Operasi : 0°C ~ 95°C (TC)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 78-TFBGA

Pakej Peranti Pembekal : 78-FBGA (9x10.5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : MT41K51 , MT41K512M8R

dokumen untuk MT41K512M8RH-125 V:E TR

Helaian data : MT41K512M8RH-125 V:E TR.pdf

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