TK31J60W,S1VQ - MOSFET N CH 600V 30.8A TO-3PN

Nombor Bahagian pengilang

TK31J60W,S1VQ

Nombor Bahagian dalaman

ABC-TK31J60W,S1VQ

pengeluar

Toshiba Semiconductor and Storage

Penerangan ringkas

MOSFET N CH 600V 30.8A TO-3PN

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

88536 Pieces

Harga rujukan

~~USD 4.225~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai TK31J60W,S1VQ dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi TK31J60W,S1VQ

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : TK31J60W,S1VQ

pengeluar : Toshiba Semiconductor and Storage

Penerangan : MOSFET N CH 600V 30.8A TO-3PN

Siri : DTMOSIV

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 600V

Semasa - Saliran berterusan (Id) @ 25 ° C : 30.8A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 1.5mA

Caj Gate (Qg) (Max) @ Vgs : 86nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 300V

Ciri FET : Super Junction

Pemberlakuan Kuasa (Max) : 230W (Tc)

Suhu Operasi : 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : TO-3P(N)

Pakej / Kes : TO-3P-3, SC-65-3

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : TK31 , TK31J6

dokumen untuk TK31J60W,S1VQ

Helaian data : TK31J60W,S1VQ.pdf

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