HUFA76609D3ST_F085 - MOSFET N-CH 100V 10A DPAK

Nombor Bahagian pengilang

HUFA76609D3ST_F085

Nombor Bahagian dalaman

ABC-HUFA76609D3ST_F085

pengeluar

ON Semiconductor

Penerangan ringkas

MOSFET N-CH 100V 10A DPAK

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

47481 Pieces

Harga rujukan

~~USD 0~~

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ABC Semiconductor mempunyai HUFA76609D3ST_F085 dalam stok untuk menjual.

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spesifikasi bagi HUFA76609D3ST_F085

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : HUFA76609D3ST_F085

pengeluar : ON Semiconductor

Penerangan : MOSFET N-CH 100V 10A DPAK

Siri : Automotive, AEC-Q101, UltraFET™

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 10A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 160 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±16V

Input Capacitance (Ciss) (Max) @ Vds : 425pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 49W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : TO-252AA

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : HUFA76 , HUFA76609

dokumen untuk HUFA76609D3ST_F085

Helaian data : HUFA76609D3ST_F085.pdf

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