IXTM35N30 - POWER MOSFET TO-3

Nombor Bahagian pengilang

IXTM35N30

Nombor Bahagian dalaman

ABC-IXTM35N30

pengeluar

IXYS

Penerangan ringkas

POWER MOSFET TO-3

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

42133 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai IXTM35N30 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IXTM35N30

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IXTM35N30

pengeluar : IXYS

Penerangan : POWER MOSFET TO-3

Siri : GigaMOS™

Status Bahagian : Last Time Buy

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 300V

Semasa - Saliran berterusan (Id) @ 25 ° C : 35A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 17.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 220nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4600pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 300W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Through Hole

Pakej Peranti Pembekal : TO-204AE

Pakej / Kes : TO-204AE

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IXT , IXTM

dokumen untuk IXTM35N30

Helaian data : IXTM35N30.pdf

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