AS4C16M16D1-5BIN - IC DRAM 256M PARALLEL 60TFBGA

Nombor Bahagian pengilang

AS4C16M16D1-5BIN

Nombor Bahagian dalaman

ABC-AS4C16M16D1-5BIN

pengeluar

Alliance Memory, Inc.

Penerangan ringkas

IC DRAM 256M PARALLEL 60TFBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

234600 Pieces

Harga rujukan

~~USD 1.772815~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai AS4C16M16D1-5BIN dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi AS4C16M16D1-5BIN

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : AS4C16M16D1-5BIN

pengeluar : Alliance Memory, Inc.

Penerangan : IC DRAM 256M PARALLEL 60TFBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - DDR

Saiz Memori : 256Mb (16M x 16)

Frekuensi Jam : 200MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 700ps

Antara Muka Memori : Parallel

Voltan - Bekalan : 2.3V ~ 2.7V

Suhu Operasi : -40°C ~ 85°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 60-TFBGA

Pakej Peranti Pembekal : 60-TFBGA (8x13)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : AS4C1 , AS4C16M1

dokumen untuk AS4C16M16D1-5BIN

Helaian data : AS4C16M16D1-5BIN.pdf

produk berkaitan untuk AS4C16M16D1-5BIN Alliance Memory, Inc.

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