DMN2005UFG-7 - MOSFET N-CH 20V 18.1A POWERDI-8

Nombor Bahagian pengilang

DMN2005UFG-7

Nombor Bahagian dalaman

ABC-DMN2005UFG-7

pengeluar

Diodes Incorporated

Penerangan ringkas

MOSFET N-CH 20V 18.1A POWERDI-8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

2386440 Pieces

Harga rujukan

~~USD 0.13716~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai DMN2005UFG-7 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi DMN2005UFG-7

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : DMN2005UFG-7

pengeluar : Diodes Incorporated

Penerangan : MOSFET N-CH 20V 18.1A POWERDI-8

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 18.1A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 13.5A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 164nC @ 10V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 6495pF @ 10V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 1.05W (Ta)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PowerDI3333-8

Pakej / Kes : 8-PowerWDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : DMN2 , DMN200

dokumen untuk DMN2005UFG-7

Helaian data : DMN2005UFG-7.pdf

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