IS43DR86400C-3DBI-TR - IC DRAM 512M PARALLEL 60TWBGA

Nombor Bahagian pengilang

IS43DR86400C-3DBI-TR

Nombor Bahagian dalaman

ABC-IS43DR86400C-3DBI-TR

pengeluar

ISSI, Integrated Silicon Solution Inc

Penerangan ringkas

IC DRAM 512M PARALLEL 60TWBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

83538 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai IS43DR86400C-3DBI-TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi IS43DR86400C-3DBI-TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : IS43DR86400C-3DBI-TR

pengeluar : ISSI, Integrated Silicon Solution Inc

Penerangan : IC DRAM 512M PARALLEL 60TWBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - DDR2

Saiz Memori : 512Mb (64M x 8)

Frekuensi Jam : 333MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 450ps

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.7V ~ 1.9V

Suhu Operasi : -40°C ~ 85°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 60-TFBGA

Pakej Peranti Pembekal : 60-TWBGA (8x10.5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : IS43DR , IS43DR8640

dokumen untuk IS43DR86400C-3DBI-TR

Helaian data : IS43DR86400C-3DBI-TR.pdf

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