SI4200DY-T1-GE3 - MOSFET 2N-CH 25V 8A 8SOIC

Nombor Bahagian pengilang

SI4200DY-T1-GE3

Nombor Bahagian dalaman

ABC-SI4200DY-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2N-CH 25V 8A 8SOIC

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

2574824 Pieces

Harga rujukan

~~USD 0.127125~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI4200DY-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI4200DY-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI4200DY-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2N-CH 25V 8A 8SOIC

Siri : TrenchFET®

Status Bahagian : Obsolete

Jenis FET : 2 N-Channel (Dual)

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 25V

Semasa - Saliran berterusan (Id) @ 25 ° C : 8A

Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.3A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 415pF @ 13V

Kuasa - Maks : 2.8W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 8-SOIC (0.154", 3.90mm Width)

Pakej Peranti Pembekal : 8-SO

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI420 , SI4200D

dokumen untuk SI4200DY-T1-GE3

Helaian data : SI4200DY-T1-GE3.pdf

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