PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Nombor Bahagian pengilang

PHD18NQ10T,118

Nombor Bahagian dalaman

ABC-PHD18NQ10T,118

pengeluar

NXP USA Inc.

Penerangan ringkas

MOSFET N-CH 100V 18A DPAK

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

45721 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai PHD18NQ10T,118 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi PHD18NQ10T,118

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : PHD18NQ10T,118

pengeluar : NXP USA Inc.

Penerangan : MOSFET N-CH 100V 18A DPAK

Siri : TrenchMOS™

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 18A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 90 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 633pF @ 25V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 79W (Tc)

Suhu Operasi : -55°C ~ 175°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : DPAK

Pakej / Kes : TO-252-3, DPak (2 Leads + Tab), SC-63

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : PHD1 , PHD18NQ

dokumen untuk PHD18NQ10T,118

Helaian data : PHD18NQ10T,118.pdf

produk berkaitan untuk PHD18NQ10T,118 NXP USA Inc.

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