JAN1N5809US - DIODE GEN PURP 100V 6A B-MELF

Nombor Bahagian pengilang

JAN1N5809US

Nombor Bahagian dalaman

ABC-JAN1N5809US

pengeluar

Microsemi Corporation

Penerangan ringkas

DIODE GEN PURP 100V 6A B-MELF

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

79938 Pieces

Harga rujukan

~~USD 5.26405~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai JAN1N5809US dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi JAN1N5809US

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : JAN1N5809US

pengeluar : Microsemi Corporation

Penerangan : DIODE GEN PURP 100V 6A B-MELF

Siri : Military, MIL-PRF-19500/477

Status Bahagian : Active

Jenis Diod : Standard

Voltan - DC Reverse (Vr) (Max) : 100V

Semasa - Purata Rectified (Io) : 6A

Voltan - Teruskan (Vf) (Max) @ Jika : 875mV @ 4A

Kelajuan : Fast Recovery =< 500ns, > 200mA (Io)

Masa Pemulihan Songsang (trr) : 30ns

Semasa - Kebocoran Songsang @ Vr : 5µA @ 100V

Kapasiti @ Vr, F : 60pF @ 10V, 1MHz

Jenis Pemasangan : Surface Mount

Pakej / Kes : SQ-MELF, B

Pakej Peranti Pembekal : B, SQ-MELF

Suhu Pengoperasian - Persimpangan : -65°C ~ 175°C

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : JAN , JAN1N

dokumen untuk JAN1N5809US

Helaian data : JAN1N5809US.pdf

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