SISH410DN-T1-GE3 - MOSFET N-CHAN PPAK 1212-8SH

Nombor Bahagian pengilang

SISH410DN-T1-GE3

Nombor Bahagian dalaman

ABC-SISH410DN-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CHAN PPAK 1212-8SH

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1283520 Pieces

Harga rujukan

~~USD 0.25502~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SISH410DN-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SISH410DN-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SISH410DN-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CHAN PPAK 1212-8SH

Siri : TrenchFET®

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 22A (Ta), 35A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 3.8W (Ta), 52W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : PowerPAK® 1212-8SH

Pakej / Kes : PowerPAK® 1212-8SH

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SISH4 , SISH410D

dokumen untuk SISH410DN-T1-GE3

Helaian data : SISH410DN-T1-GE3.pdf

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