EPC8009 - GANFET TRANS 65V 2.7A BUMPED DIE

Nombor Bahagian pengilang

EPC8009

Nombor Bahagian dalaman

ABC-EPC8009

pengeluar

EPC

Penerangan ringkas

GANFET TRANS 65V 2.7A BUMPED DIE

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

259770 Pieces

Harga rujukan

~~USD 1.26~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai EPC8009 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi EPC8009

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : EPC8009

pengeluar : EPC

Penerangan : GANFET TRANS 65V 2.7A BUMPED DIE

Siri : eGaN®

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Salurkan ke Voltan Sumber (Vdss) : 65V

Semasa - Saliran berterusan (Id) @ 25 ° C : 2.7A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 130 mOhm @ 500mA, 5V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 0.45nC @ 5V

Vgs (Max) : +6V, -4V

Input Capacitance (Ciss) (Max) @ Vds : 52pF @ 32.5V

Ciri FET : -

Pemberlakuan Kuasa (Max) : -

Suhu Operasi : -40°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : Die

Pakej / Kes : Die

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : EP , EPC

dokumen untuk EPC8009

Helaian data : EPC8009.pdf

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