SI5515DC-T1-GE3 - MOSFET N/P-CH 20V 4.4A 1206-8

Nombor Bahagian pengilang

SI5515DC-T1-GE3

Nombor Bahagian dalaman

ABC-SI5515DC-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N/P-CH 20V 4.4A 1206-8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

60762 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI5515DC-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI5515DC-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI5515DC-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N/P-CH 20V 4.4A 1206-8

Siri : TrenchFET®

Status Bahagian : Obsolete

Jenis FET : N and P-Channel

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 4.4A, 3A

Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.4A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Kuasa - Maks : 1.1W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 8-SMD, Flat Lead

Pakej Peranti Pembekal : 1206-8 ChipFET™

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI551 , SI5515D

dokumen untuk SI5515DC-T1-GE3

Helaian data : SI5515DC-T1-GE3.pdf

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