RQ3E070BNTB - MOSFET N-CH 30V 7A HSMT8

Nombor Bahagian pengilang

RQ3E070BNTB

Nombor Bahagian dalaman

ABC-RQ3E070BNTB

pengeluar

Rohm Semiconductor

Penerangan ringkas

MOSFET N-CH 30V 7A HSMT8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

6612620 Pieces

Harga rujukan

~~USD 0.0495~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai RQ3E070BNTB dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi RQ3E070BNTB

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : RQ3E070BNTB

pengeluar : Rohm Semiconductor

Penerangan : MOSFET N-CH 30V 7A HSMT8

Siri : -

Status Bahagian : Active

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 7A (Ta)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 27 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Caj Gate (Qg) (Max) @ Vgs : 8.9nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 15V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 2W (Ta)

Suhu Operasi : 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-HSMT (3.2x3)

Pakej / Kes : 8-PowerVDFN

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : RQ3 , RQ3E0

dokumen untuk RQ3E070BNTB

Helaian data : RQ3E070BNTB.pdf

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