W947D2HBJX5E TR - IC DRAM 128M PARALLEL 90VFBGA

Nombor Bahagian pengilang

W947D2HBJX5E TR

Nombor Bahagian dalaman

ABC-W947D2HBJX5E TR

pengeluar

Winbond Electronics

Penerangan ringkas

IC DRAM 128M PARALLEL 90VFBGA

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

333284 Pieces

Harga rujukan

~~USD 1.091955~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai W947D2HBJX5E TR dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi W947D2HBJX5E TR

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : W947D2HBJX5E TR

pengeluar : Winbond Electronics

Penerangan : IC DRAM 128M PARALLEL 90VFBGA

Siri : -

Status Bahagian : Active

Jenis Memori : Volatile

Format Memori : DRAM

Teknologi : SDRAM - Mobile LPDDR

Saiz Memori : 128Mb (4M x 32)

Frekuensi Jam : 200MHz

Tulis Masa Kitar - Kata, Halaman : 15ns

Masa Capaian : 5ns

Antara Muka Memori : Parallel

Voltan - Bekalan : 1.7V ~ 1.95V

Suhu Operasi : -25°C ~ 85°C (TC)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 90-TFBGA

Pakej Peranti Pembekal : 90-VFBGA (8x13)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : W947D , W947D2H

dokumen untuk W947D2HBJX5E TR

Helaian data : W947D2HBJX5E TR.pdf

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