SIZF916DT-T1-GE3 - MOSFET N-CH DUAL 30V

Nombor Bahagian pengilang

SIZF916DT-T1-GE3

Nombor Bahagian dalaman

ABC-SIZF916DT-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH DUAL 30V

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

844809 Pieces

Harga rujukan

~~USD 0.38745~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SIZF916DT-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SIZF916DT-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SIZF916DT-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH DUAL 30V

Siri : TrenchFET® Gen IV

Status Bahagian : Active

Jenis FET : 2 N-Channel (Dual)

Ciri FET : Standard

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 23A (Ta), 40A (Tc)

Rds On (Max) @ Id, Vgs : 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA, 2.2V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 22nC @ 10V, 95nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1060pF @ 15V, 4320pF @ 15V

Kuasa - Maks : 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 8-PowerWDFN

Pakej Peranti Pembekal : 8-PowerPair® (6x5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SIZF9 , SIZF916D

dokumen untuk SIZF916DT-T1-GE3

Helaian data : SIZF916DT-T1-GE3.pdf

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