SI4190DY-T1-GE3 - MOSFET N-CH 100V 20A 8-SOIC

Nombor Bahagian pengilang

SI4190DY-T1-GE3

Nombor Bahagian dalaman

ABC-SI4190DY-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET N-CH 100V 20A 8-SOIC

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

42592 Pieces

Harga rujukan

~~USD 0~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI4190DY-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI4190DY-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI4190DY-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET N-CH 100V 20A 8-SOIC

Siri : TrenchFET®

Status Bahagian : Obsolete

Jenis FET : N-Channel

Teknologi : MOSFET (Metal Oxide)

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 20A (Tc)

Voltan Drive (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8.8 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.8V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 58nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 50V

Ciri FET : -

Pemberlakuan Kuasa (Max) : 3.5W (Ta), 7.8W (Tc)

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej Peranti Pembekal : 8-SO

Pakej / Kes : 8-SOIC (0.154", 3.90mm Width)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI419 , SI4190D

dokumen untuk SI4190DY-T1-GE3

Helaian data : SI4190DY-T1-GE3.pdf

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