SI7252DP-T1-GE3 - MOSFET 2N-CH 100V 36.7A PPAK 8SO

Nombor Bahagian pengilang

SI7252DP-T1-GE3

Nombor Bahagian dalaman

ABC-SI7252DP-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2N-CH 100V 36.7A PPAK 8SO

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

590037 Pieces

Harga rujukan

~~USD 0.55475~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI7252DP-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI7252DP-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI7252DP-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2N-CH 100V 36.7A PPAK 8SO

Siri : TrenchFET®

Status Bahagian : Active

Jenis FET : 2 N-Channel (Dual)

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 100V

Semasa - Saliran berterusan (Id) @ 25 ° C : 36.7A

Rds On (Max) @ Id, Vgs : 18 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1170pF @ 50V

Kuasa - Maks : 46W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : PowerPAK® SO-8 Dual

Pakej Peranti Pembekal : PowerPAK® SO-8 Dual

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI725 , SI7252D

dokumen untuk SI7252DP-T1-GE3

Helaian data : SI7252DP-T1-GE3.pdf

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