SIZF906DT-T1-GE3 - MOSFET 2 N-CH 30V 60A POWERPAIR

Nombor Bahagian pengilang

SIZF906DT-T1-GE3

Nombor Bahagian dalaman

ABC-SIZF906DT-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2 N-CH 30V 60A POWERPAIR

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

881930 Pieces

Harga rujukan

~~USD 0.37114~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SIZF906DT-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SIZF906DT-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SIZF906DT-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2 N-CH 30V 60A POWERPAIR

Siri : TrenchFET® Gen IV

Status Bahagian : Active

Jenis FET : 2 N-Channel (Dual)

Ciri FET : Standard

Salurkan ke Voltan Sumber (Vdss) : 30V

Semasa - Saliran berterusan (Id) @ 25 ° C : 60A (Tc)

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 22nC @ 4.5V, 92nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 15V, 8200pF @ 15V

Kuasa - Maks : 38W (Tc), 83W (Tc)

Suhu Operasi : -55°C ~ 150°C (TA)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 8-PowerWDFN

Pakej Peranti Pembekal : 8-PowerPair® (6x5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SIZF9 , SIZF906D

dokumen untuk SIZF906DT-T1-GE3

Helaian data : SIZF906DT-T1-GE3.pdf

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