SI8900EDB-T2-E1 - MOSFET 2N-CH 20V 5.4A 10-MFP

Nombor Bahagian pengilang

SI8900EDB-T2-E1

Nombor Bahagian dalaman

ABC-SI8900EDB-T2-E1

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2N-CH 20V 5.4A 10-MFP

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

380758 Pieces

Harga rujukan

~~USD 0.85965~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI8900EDB-T2-E1 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI8900EDB-T2-E1

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI8900EDB-T2-E1

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2N-CH 20V 5.4A 10-MFP

Siri : TrenchFET®

Status Bahagian : Active

Jenis FET : 2 N-Channel (Dual) Common Drain

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 5.4A

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1V @ 1.1mA

Caj Gate (Qg) (Max) @ Vgs : -

Input Capacitance (Ciss) (Max) @ Vds : -

Kuasa - Maks : 1W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : 10-UFBGA, CSPBGA

Pakej Peranti Pembekal : 10-Micro Foot™ CSP (2x5)

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI890 , SI8900E

dokumen untuk SI8900EDB-T2-E1

Helaian data : SI8900EDB-T2-E1.pdf

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