SI7900AEDN-T1-GE3 - MOSFET 2N-CH 20V 6A PPAK 1212-8

Nombor Bahagian pengilang

SI7900AEDN-T1-GE3

Nombor Bahagian dalaman

ABC-SI7900AEDN-T1-GE3

pengeluar

Vishay Siliconix

Penerangan ringkas

MOSFET 2N-CH 20V 6A PPAK 1212-8

Rosh Status

Memimpin percuma / RoHS Compliant

Masa penghantaran

1-2 hari

kuantiti disediakan

1174040 Pieces

Harga rujukan

~~USD 0.2788~~

Harga kami

- (Sila hubungi kami untuk harga yang lebih baik: [email protected])

ABC Semiconductor mempunyai SI7900AEDN-T1-GE3 dalam stok untuk menjual.

Pilihan penghantaran dan penghantaran masa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Pilihan pembayaran:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasi bagi SI7900AEDN-T1-GE3

Jaminan kualiti : jaminan 365 hari

Sumber saham : Francais Pengedar / Pengilang Direct

Negara asal : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nombor Bahagian : SI7900AEDN-T1-GE3

pengeluar : Vishay Siliconix

Penerangan : MOSFET 2N-CH 20V 6A PPAK 1212-8

Siri : TrenchFET®

Status Bahagian : Active

Jenis FET : 2 N-Channel (Dual) Common Drain

Ciri FET : Logic Level Gate

Salurkan ke Voltan Sumber (Vdss) : 20V

Semasa - Saliran berterusan (Id) @ 25 ° C : 6A

Rds On (Max) @ Id, Vgs : 26 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Caj Gate (Qg) (Max) @ Vgs : 16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Kuasa - Maks : 1.5W

Suhu Operasi : -55°C ~ 150°C (TJ)

Jenis Pemasangan : Surface Mount

Pakej / Kes : PowerPAK® 1212-8 Dual

Pakej Peranti Pembekal : PowerPAK® 1212-8 Dual

Berat : -

Keadaan : Baru dan asli

Pautan Berkaitan : SI790 , SI7900AE

dokumen untuk SI7900AEDN-T1-GE3

Helaian data : SI7900AEDN-T1-GE3.pdf

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